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PTB 20051 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
Description
The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

6 Watts, 1.465-1.513 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
9.0
Output Power (Watts)
7.5 6.0 4.5 3.0 1.5 0.0 0 0.5 1 1.5 2
200 51
LOT COD E
VCC = 26 V ICQ = 40 mA f = 1.501 GHz
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC
Symbol
VCER VCBO VEBO IC PD
Value
50 50 4.0 0.7 28 0.16 -40 to +150 6.2
Unit
Vdc Vdc Vdc Adc Watts W/C C C/W
1 9/28/98
PTB 20051
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested)
e
Conditions
IB = 0 A, IC = 10 mA, RBE = 22 VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 10 V, IC = 0.7 A
Symbol
V(BR)CER V(BR)CES V(BR)EBO hFE
Min
50 50 4 20
Typ
-- -- 5 50
Max
-- -- -- 120
Units
Volts Volts Volts --
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 1.501 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz--all phase angles at frequency of test)
Symbol
Gpe P-1dB C
Min
8.0 6.5 35 --
Typ
-- -- -- --
Max
-- -- -- 5:1
Units
dB Watts % --
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA)
Z Source
Z Load
Frequency
GHz 1.465 1.489 1.513 R 10.7 9.4 8.1
Z Source
jX 11.2 11.8 12.8 R 11.9 10.2 9.7
Z Load
jX 21.0 20.3 18.3
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434
1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20051 Uen Rev. D 09-28-98
2


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